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Ordering number:EN3062A
FC120
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency General-Purpose Amp, Differential Amp Applications
Features
* Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC120 is formed with two chips, being equivalent to the 2SC3142, placed in one package. * Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm 2068
[FC120]
Electrical Connection
E1:Emitter1 E2:Emitter2 B2:Base2 C2:Collerctor2 B1:Base1 C1:Collector1 SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings 25 20 3 30 200 300 150 -55 to+150 Unit V V V mA mW mW
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base to Emitter Voltage Drop Gain-Bandwidth Product Reverse Transfer Capacitance Base to Collector Time Constant Noise Figure Power Gain Symbol ICBO IEBO hFE hFE(small/ large) VBE(large -small) fT Cre rbb'cc NF PG VCB=10V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCE=6V, IC=1mA VCE=6V, IC=4mA VCE=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz 2.2 28 450 80 0.8 0.98 1.0 750 0.6 0.9 19 15 mV MHz pF ps dB dB Conditions Ratings min typ max 0.1 0.1 200 Unit A A
Note: The specifications shown above are for each individual transistor. Marking:120
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/6169MO/5169MO, TS No.3062-1/6
FC120 NF, PG Test Circuit
L1:1mmo plated wire, 10mmo 5T, 15mm pitch, tap : 2T from base side L2:1mmo plated wire, 10mmo 7T, 10mm pitch, tap : 2T from VC side L3:1mmo enamel wire, 10mmo 3T, 10mm pitch Unit (Capacitance:F)
No.3062-2/6
FC120
No.3062-3/6
FC120
No.3062-4/6
FC120
No.3062-5/6
FC120
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.3062-6/6

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